APTGF165A60D1G Microsemi Power Products Group, APTGF165A60D1G Datasheet
APTGF165A60D1G
Specifications of APTGF165A60D1G
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APTGF165A60D1G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF165A60D1G Application • Welding converters 3 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGF165A60D1G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25° 15V ...
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... Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 APTGF165A60D1G IGBT Diode For terminals M5 To Heatsink M6 Forward Characteristic of diode 400 V =300V CE D=50% R =16Ω 300 G ZVS T =125°C ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF165A60D1G =15V) GE ...