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APTGF50H120TG
APTGF50H120TG | |
|---|---|
| Manufacturer Part Number | APTGF50H120TG |
| Description | IGBT MODULE NPT FULL BRIDGE SP4 |
| Manufacturer | Microsemi Power Products Group |
| APTGF50H120TG datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APTGF50H120TG | |||
|---|---|---|---|
| Igbt Type | NPT | Configuration | Full Bridge Inverter |
| Voltage - Collector Emitter Breakdown (max) | 1200V | Vce(on) (max) @ Vge, Ic | 3.7V @ 15V, 50A |
| Current - Collector (ic) (max) | 75A | Current - Collector Cutoff (max) | 250µA |
| Input Capacitance (cies) @ Vce | 3.45nF @ 25V | Power - Max | 312W |
| Input | Standard | Ntc Thermistor | Yes |
| Mounting Type | Chassis Mount | Package / Case | SP4 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APTGF50H120TGMP |
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Full - Bridge
NPT IGBT Power Module
VBUS
Q1
G1
OUT1
E1
OUT2
Q2
G2
E 2
NTC1
0/VBUS
G3
G4
E3
E4
VBUS
0/VBUS
E1
E2
G1
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50H120TG
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
Q3
•
Motor control
Features
G3
•
Non Punch Through (NPT) Fast IGBT
-
E3
-
-
Q4
-
-
G4
-
-
E4
-
•
Kelvin emitter for easy drive
NTC2
•
Very low stray inductance
-
-
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
•
Stable temperature behavior
OUT2
•
Very rugged
•
Direct mounting to heatsink (isolated package)
OUT1
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
•
Easy paralleling due to positive TC of VCEsat
NTC1
•
Low profile
•
RoHS compliant
Max ratings
1200
T
= 25°C
75
c
T
= 80°C
50
c
T
= 25°C
150
c
±20
T
= 25°C
312
c
T
= 150°C
100A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
Unit
V
A
V
W
1 - 6
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APTGF50H120TG Summary of contents |
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