APTGF150DU120TG

Manufacturer Part NumberAPTGF150DU120TG
DescriptionIGBT MODULE NPT DUAL 1200V SP4
ManufacturerMicrosemi Power Products Group
APTGF150DU120TG datasheet
 


Specifications of APTGF150DU120TG

Igbt TypeNPTConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 150A
Current - Collector (ic) (max)200ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.2nF @ 25VPower - Max961W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPTGF150DU120TGMP
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Dual common source
NPT IGBT Power Module
C1
C2
Q1
G1
E1
E
NT C1
G2
E2
C1
E
E1
E2
G1
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF150DU120TG
V
I
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Q2
Features
G2
Non Punch Through (NPT) Fast IGBT
-
E2
-
-
-
-
NTC2
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
C2
Very rugged
Direct mounting to heatsink (isolated package)
C2
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
Easy paralleling due to positive T
NTC1
Low profile
RoHS Compliant
Max ratings
1200
T
= 25°C
200
c
T
= 80°C
150
c
T
= 25°C
300
c
±20
T
= 25°C
961
c
T
= 150°C
300A @ 1200V
j
www.microsemi.com
= 1200V
CES
= 150A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
of V
C
CEsat
Unit
V
A
V
W
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APTGF150DU120TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DU120TG V I Application • AC Switches • Switched Mode Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGF150DU120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF150DU120TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DU120TG =15V) GE 300 T J 250 200 150 100 T =125° Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DU120TG Forward Characteristic of diode 250 ...