APTGF150DU120TG Microsemi Power Products Group, APTGF150DU120TG Datasheet

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APTGF150DU120TG

Manufacturer Part Number
APTGF150DU120TG
Description
IGBT MODULE NPT DUAL 1200V SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF150DU120TG

Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF150DU120TGMP
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
G1
E1
I
NT C1
P
I
CM
CES
C
GE
D
Dual common source
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
C1
E1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
C1
Parameter
E
G2
G2
E2
E2
E
C2
Q2
NTC2
NTC1
C2
C2
www.microsemi.com
NTC2
G2
E2
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
300A @ 1200V
APTGF150DU120TG
Max ratings
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive T
Low profile
RoHS Compliant
1200
200
150
300
±20
961
-
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 150A @ Tc = 80°C
= 1200V
Unit
W
A
V
V
C
of V
®
CEsat
1 - 5

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APTGF150DU120TG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DU120TG V I Application • AC Switches • Switched Mode Power Supplies • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGF150DU120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF150DU120TG R T: Thermistor temperature 25    Thermistor value at T     ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DU120TG =15V) GE 300 T J 250 200 150 100 T =125° Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DU120TG Forward Characteristic of diode 250 ...

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