APTGF150DU120TG Microsemi Power Products Group, APTGF150DU120TG Datasheet - Page 5

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APTGF150DU120TG

Manufacturer Part Number
APTGF150DU120TG
Description
IGBT MODULE NPT DUAL 1200V SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF150DU120TG

Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF150DU120TGMP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF150DU120TG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
90
80
70
60
50
40
30
20
10
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
hard
0.7
0.5
0.1
0.3
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
80
0.0001
I
ZVS
C
(A)
120
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=5.6 Ω
160
=600V
www.microsemi.com
0.001
rectangular Pulse Duration (Seconds)
200
Single Pulse
Diode
0.01
250
200
150
100
APTGF150DU120TG
50
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
V
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5

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