APTGF300A120D3G Microsemi Power Products Group, APTGF300A120D3G Datasheet - Page 5

• Manufacturer Part Number: APTGF300A120D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300A120D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 19nF @ 25V
• Power - Max: 2100W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF300A120D3GMP

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
70
60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
0.9
0.05
0.7
0.5
0.1
0.3
ZCS
100
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
hard
0.0001
I
C
ZVS
(A)
200
V
D=50%
R
T
T
300
J
C
CE
G
=125°C
=75°C
=3.3 Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
400
Single Pulse
www.microsemi.com
Diode
0.01
600
450
300
150
APTGF300A120D3G
0
0
0.1
Forward Characteristic of diode
0.5
1
V
T
1.5
F
J
=125°C
(V)
1
T
2
J
=25°C
2.5
10
3
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