CPV363M4K Vishay, CPV363M4K Datasheet
CPV363M4K
Specifications of CPV363M4K
VS-CPV363M4K
VS-CPV363M4K
VSCPV363M4K
VSCPV363M4K
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CPV363M4K Summary of contents
Page 1
... Parameter R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module CPV363M4K Short Circuit Rated UltraFast IGBT 90° 125°C, Supply Voltage 360Vdc Max. -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf• ...
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... CPV363M4K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... 20µs PULSE WIDTH 0 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 T = 150 15V GE 10 CPV363M4K 0° ° tor = ula tio . ted V o lta 150 5µs PULSE WIDTH 0 Gate-to-Emitter Voltage (V) GE Fig Typical Transfer Characteristics 3 ...
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... CPV363M4K ase T em pera ture (° Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0. 0.01 SINGLE PULSE ( THE RMAL RES PO NSE) 0.01 0.0000 1 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case Fig Typical Collector-to-Emitter Voltage 0.001 0 ulse D ura tion ( ...
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... Collector-to-Emitter Voltage 1 480V 15V GE ° 6.0A 0.8 C 0.6 0.4 0.2 0 Gate Resistance (Ohm Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance C SHORTED ce 100 CPV363M4K 400V 6. Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 23Ohm 15V 480V CC 1 0.1 -60 -40 - ...
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... CPV363M4K 1 23Ohm 150 C ° J 480V 15V 1.2 GE 0.9 0.6 0.3 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 50° 25° 25° 0.4 0.8 1.2 1.6 F orward V oltage D rop - ° TIN ollector-to-E m itter V oltage ( Fig ...
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... ° °C J 400 I = 12A F 200 100 /µs) f Fig Typical Stored Charge vs. di 100 1000 Fig Typical Recovery Current vs. di /dt f 10000 1000 100 10 1000 /dt f CPV363M4K ° ° . 100 /µ ° ° 100 di / /µ Fig Typical di (rec)M 1000 ...
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... CPV363M4K 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode 10 td( on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on Same t ype device as D.U.T. D.U. d(on) r d(off) f Fig. 18b - G ATE VO LTA . DUT V O LTA URR E NT Ipk ...
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... F 100 ATE D.U. 480V CPV363M4K DE VICE UNDE CURR . D.U.T. CURR 480V @25°C C ...
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... CPV363M4K Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. 3.91 ( .154) 2X 21.97 (.865 3.94 (.155) 4.06 ± 0.51 (.160 ± .020) 5.08 (.200) 6X WORLD HEADQUARTERS: 233 Kansas St ...