APT50GF60JU3 Microsemi Power Products Group, APT50GF60JU3 Datasheet

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APT50GF60JU3

Manufacturer Part Number
APT50GF60JU3
Description
IGBT 600V 75A 277W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50GF60JU3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
40µA
Input Capacitance (cies) @ Vce
2.25nF @ 25V
Power - Max
277W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GF60JU3
Manufacturer:
APT
Quantity:
15 500
Absolute maximum ratings
Symbol
IF
V
IF
V
I
I
I
I
P
CM
LM
RMS
ISOTOP
CES
C1
C2
GE
A V
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA clamped Inductive load Current R
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
NPT IGBT
ISOTOP
E
®
Buck chopper
C
C
A
Parameter
A
E
www.microsemi.com
Duty cycle=0.5
G
=11Ω
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Non Punch Through (NPT) THUNDERBOLT IGBT
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
T
C
C
C
C
C
C
= 25°C
= 90°C
= 25°C
= 25°C
= 25°C
= 80°C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
®
V
I
Package (SOT-227)
APT50GF60JU3
C
CES
= 50A @ Tc = 90°C
= 600V
Max ratings
600
160
±20
277
100
75
50
30
39
C
of V
Unit
W
A
A
A
V
V
CEsat
1 - 8
®

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APT50GF60JU3 Summary of contents

Page 1

... Low junction to case thermal resistance • Easy paralleling due to positive T • RoHS Compliant T = 25° 90° 25° 25°C C =11Ω 25° Duty cycle=0 80°C C www.microsemi.com APT50GF60JU3 V = 600V CES I = 50A @ Tc = 90°C C ® Package (SOT-227 CEsat Max ratings Unit 600 160 ±20 V 277 W 100 A 30 ...

Page 2

... Total switching Losses ts T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Total switching Losses ts APT50GF60JU3 = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT50GF60JU3 Test Conditions Min I = 30A 60A 30A T = 125° ...

Page 4

... Typical IGBT Performance Curve 0.5 0.45 0.9 0.4 0.7 0.35 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APT50GF60JU3 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com ...

Page 5

... APT50GF60JU3 www.microsemi.com ...

Page 6

... Typical Diode Performance Curve APT50GF60JU3 www.microsemi.com ...

Page 7

... APT50GF60JU3 www.microsemi.com ...

Page 8

... Anode Emitter Dimensions in Millimeters and (Inches) www.microsemi.com APT50GF60JU3 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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