APT100GT60JR Microsemi Power Products Group, APT100GT60JR Datasheet

IGBT 600V 148A 500W SOT227

APT100GT60JR

Manufacturer Part Number
APT100GT60JR
Description
IGBT 600V 148A 500W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT60JR

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
148A
Current - Collector Cutoff (max)
25µA
Input Capacitance (cies) @ Vce
5.15nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT60JRMI
APT100GT60JRMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT60JR
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT100GT60JR
Manufacturer:
ASTEC
Quantity:
560
Part Number:
APT100GT60JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The Thunderblot IGBT
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
P
CES
GES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Thunderbolt IGBT
1
(V
• High Freq. Switching to 80KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
®
GE
GE
C
C
offers superior ruggedness and ultrafast
GE
GE
= 25°C
J
= 100°C
= 15V, I
= 15V, I
= 150°C
= ±30V)
, I
C
GE
= 1.5mA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 100A, T
= 100A, T
®
C
j
j
j
= 4mA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
MIN
600
1.7
3
APT100GT60JR
300A @ 600V
-55 to 150
600
±30
148
300
500
300
TYP
2.1
2.5
80
APT100GT60JR
4
ISOTOP
G
APT100GT60JR
MAX
TBD
300
2.5
25
5
600V
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Volts
Units
Volts
°C
µA
nA

Related parts for APT100GT60JR

APT100GT60JR Summary of contents

Page 1

... 25° 600V 0V 125° ±30V) GE APT Website - http://www.advancedpower.com 600V APT100GT60JR APT100GT60JR ISOTOP ® 25°C unless otherwise specified. C APT100GT60JR 600 ±30 148 80 300 300A @ 600V 500 -55 to 150 300 MIN TYP MAX 600 1.7 2.1 2.5 2 TBD 300 " ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge Q gc Switching Safe Operating Area ...

Page 3

PULSE TEST<0.5 % DUTY 180 CYCLE 160 140 120 100 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 ...

Page 4

V = 15V 400V 25°C or 125° 4.3Ω 100µ 100 125 150 175 200 225 ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 100 50 T (° 0.0587 5 4.48 ° 125 400V 4.3Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT60JR 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 ° min (f max ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) CollectorVoltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125° APT100GT60JR Gate Voltage 10% t d(on 90% Collector Current 5% 5% 10% CollectorVoltage Switching Energy T = 125°C J ...

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