IGBT 600V 148A 500W SOT227

 

APT100GT60JR

Manufacturer Part NumberAPT100GT60JR
DescriptionIGBT 600V 148A 500W SOT227
ManufacturerMicrosemi Power Products Group
SeriesThunderbolt IGBT®
APT100GT60JR datasheets

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Specifications of APT100GT60JR

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 100A
Current - Collector (ic) (max)148ACurrent - Collector Cutoff (max)25µA
Input Capacitance (cies) @ Vce5.15nF @ 25VPower - Max500W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT100GT60JRMI
APT100GT60JRMI
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TYPICAL PERFORMANCE CURVES
Thunderbolt IGBT
The Thunderblot IGBT
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
MAXIMUM RATINGS
Parameter
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GE
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
I
Pulsed Collector Current
CM
Switching Safe Operating Area @ T
SSOA
P
Total Power Dissipation
D
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
V
Collector-Emitter Breakdown Voltage (V
(BR)CES
V
Gate Threshold Voltage
GE(TH)
Collector-Emitter On Voltage (V
V
CE(ON)
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
I
CES
Collector Cut-off Current (V
I
Gate-Emitter Leakage Current (V
GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
®
®
®
offers superior ruggedness and ultrafast
• High Freq. Switching to 80KHz
• Ultra Low Leakage Current
All Ratings: T
= 25°C
C
= 100°C
C
1
= 150°C
J
= 0V, I
= 4mA)
GE
C
(V
= V
, I
= 1.5mA, T
= 25°C)
CE
GE
C
j
= 15V, I
= 100A, T
= 25°C)
GE
C
j
= 15V, I
= 100A, T
= 125°C)
GE
C
j
2
= 600V, V
= 0V, T
= 25°C)
CE
GE
j
= 600V, V
= 0V, T
= 125°C)
CE
GE
j
= ±30V)
GE
APT Website - http://www.advancedpower.com
600V
APT100GT60JR
APT100GT60JR
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT100GT60JR
600
±30
148
80
300
300A @ 600V
500
-55 to 150
300
MIN
TYP
MAX
600
3
4
5
1.7
2.1
2.5
2.5
25
2
TBD
300
"UL Recognized"
file # E145592
C
E
UNIT
Volts
Amps
Watts
°C
Units
Volts
µA
nA

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APT100GT60JR Summary of contents

  • Page 1

    ... 25° 600V 0V 125° ±30V) GE APT Website - http://www.advancedpower.com 600V APT100GT60JR APT100GT60JR ISOTOP ® 25°C unless otherwise specified. C APT100GT60JR 600 ±30 148 80 300 300A @ 600V 500 -55 to 150 300 MIN TYP MAX 600 1.7 2.1 2.5 2 TBD 300 " ...

  • Page 2

    Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge Q gc Switching Safe Operating Area ...

  • Page 3

    PULSE TEST<0.5 % DUTY 180 CYCLE 160 140 120 100 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 ...

  • Page 4

    V = 15V 400V 25°C or 125° 4.3Ω 100µ 100 125 150 175 200 225 ...

  • Page 5

    ... RECTANGULAR PULSE DURATION (SECONDS) 100 50 T (° 0.0587 5 4.48 ° 125 400V 4.3Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT60JR 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 ° min (f max ...

  • Page 6

    ... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) CollectorVoltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125° APT100GT60JR Gate Voltage 10% t d(on 90% Collector Current 5% 5% 10% CollectorVoltage Switching Energy T = 125°C J ...

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