APTGF30A60T1G Microsemi Power Products Group, APTGF30A60T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF30A60T1G
• Description: IGBT MODULE NPT PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30A60T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
80
60
40
20
80
60
40
20
0
0
8
7
6
5
4
3
2
1
0
0
0
1.20
1.10
1.00
0.90
0.80
6
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
1
25
CE
Output characteristics (V
V
, Collector to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
V
GE
2
GE
T
8
, Gate to Emitter Voltage (V)
J
1
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
3
50
4
10
T
J
=125°C
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
75
= 25°C
T
6
12
J
=25°C
7
GE
3
=15V)
100
T
T
J
=25°C
14
8
J
=125°C
Ic=60A
Ic=15A
Ic=30A
www.microsemi.com
9
125
10
16
4
37.5
12.5
50
40
30
20
10
18
16
14
12
10
4
3
2
1
0
0
50
25
8
6
4
2
0
25
0
25
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
APTGF30A60T1G
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
V
J
Output Characteristics (V
= 30A
T
CE
= 25°C
J
20
, Junction Temperature (°C)
, Collector to Emitter Voltage (V)
50
T
50
C
, Case Temperature (°C)
1
T
J
=25°C
40
Gate Charge (nC)
V
Gate Charge
CE
75
=300V
75
V
60
CE
2
250µs Pulse Test
< 0.5% Duty cycle
V
=120V
GE
100
= 15V
80
GE
T
100
J
=10V)
=125°C
Ic=30A
Ic=60A
3
125
V
Ic=15A
CE
100
=480V
125
150
120
4
4 – 6