APTGF30A60T1G Microsemi Power Products Group, APTGF30A60T1G Datasheet - Page 6

• Manufacturer Part Number: APTGF30A60T1G
• Description: IGBT MODULE NPT PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30A60T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
10
1
0
Capacitance vs Collector to Emitter Voltage
0
0.05
V
0.9
0.3
0.7
0.5
0.1
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cres
Cies
www.microsemi.com
50
Single Pulse
0.01
280
240
200
160
120
80
40
0
0
APTGF30A60T1G
Operating Frequency vs Collector Current
0.1
switching
hard
10
I
C
, Collector Current (A)
ZVS
20
1
ZCS
30
V
D = 50%
R
T
T
J
C
CE
G
= 75°C
= 125°C
= 6.8Ω
= 400V
40
10
50
6 – 6