APTGF50A60T1G Microsemi Power Products Group, APTGF50A60T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF50A60T1G
• Description: IGBT MODULE NPT PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50A60T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
100
75
50
25
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
25
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
50
10
4
T
J
=125°C
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
75
= 25°C
12
6
GE
7
=15V)
3
100
T
T
14
J
8
=25°C
J
Ic=100A
=125°C
Ic=25A
Ic=50A
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9
125
10
16
4
150
100
70
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
50
0
8
6
4
2
0
0
4
3
2
1
0
25
0
25
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
APTGF50A60T1G
250µs Pulse Test
< 0.5% Duty cycle
I
T
V
C
J
Output Characteristics (V
25
CE
= 50A
= 25°C
T
, Collector to Emitter Voltage (V)
J
50
, Junction Temperature (°C)
T
C
50
, Case Temperature (°C)
50
1
Gate Charge (nC)
V
Gate Charge
75
75
CE
T
=300V
J
=25°C
100 125 150 175 200
75
V
2
CE
250µs Pulse Test
< 0.5% Duty cycle
V
=120V
100
GE
= 15V
GE
T
100
J
=125°C
=10V)
3
Ic=100A
125
V
Ic=50A
Ic=25A
CE
=480V
125
150
4
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