APTGF25A120T1G Microsemi Power Products Group, APTGF25A120T1G Datasheet

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APTGF25A120T1G

Manufacturer Part Number
APTGF25A120T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF25A120T1G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 25A
Current - Collector (ic) (max)
40A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.65nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
NPT IGBT Power Module
I
P
I
CM
CES
GE
C
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
9
7
8
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Q1
Q2
Phase leg
5
1
6
2
CR1
CR2
3
4
Parameter
11
12
NTC
www.microsemi.com
Application
Features
Benefits
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
APTGF25A120T1G
T
T
T
T
T
C
C
C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
j
V
I
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
C
CES
= 25A @ Tc = 80°C
= 1200V
50A@1150V
Max ratings
1200
±20
100
208
40
25
Unit
W
V
A
V
1 – 6

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APTGF25A120T1G Summary of contents

Page 1

... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF25A120T1G V = 1200V CES I = 25A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF25A120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF25A120T1G Min Typ Max IGBT 0.6 Diode 1.4 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

Page 4

... Junction Temperature (°C) J =15V =125° =125° =25°C J 7.5 10 12.5 15 Ic=50A Ic=25A Ic=12. 100 125 www.microsemi.com APTGF25A120T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 12 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 25A V =240V ...

Page 5

... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) APTGF25A120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125° 25° ...

Page 6

... U.S and Foreign patents pending. All Rights Reserved. Cies Coes Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF25A120T1G Operating Frequency vs Collector Current 120 V = 600V 50% 100 R = 22Ω 125°C ...

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