APTGF50DA120T1G Microsemi Power Products Group, APTGF50DA120T1G Datasheet

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... CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DA120T1G Application 11 • • • Features NTC • 12 • • ...

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... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DA120T1G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF50DA120T1G Min Typ Max IGBT Diode 2500 -40 150 -40 125 -40 100 M4 2.5 Min Typ Max 50 3952 Unit 0.4 °C/W 0.9 V °C 4.7 N.m ...

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... On state Voltage vs Gate to Emitter Volt 25° 250µs Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGF50DA120T1G =15V =125° =25° =25° Ic=100A Ic=50A Ic=25A ...

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... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) APTGF50DA120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DA120T1G 120 100 ...