APTGF90SK60T1G Microsemi Power Products Group, APTGF90SK60T1G Datasheet

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... NTC 4 • • 12 • Benefits • • • • • • Parameter www.microsemi.com APTGF90SK60T1G V = 600V CES I = 90A @ Tc = 80° and DC motor control Switched Mode Power Supplies Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz ...

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... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90SK60T1G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF90SK60T1G Min Typ Max IGBT 0.3 Diode 0.55 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

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... Junction Temperature (°C) J =15V =25° =125° =25° Ic=180A Ic=90A Ic=45A 100 125 www.microsemi.com APTGF90SK60T1G Output Characteristics (V =10V) GE 250 250µs Pulse Test < 0.5% Duty cycle 200 T =25°C J 150 100 T =125° Collector to Emitter Voltage (V) CE Gate Charge 18 V =120V I = 90A 16 ...

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... Eon, 180A 15V Eoff, 180A 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90SK60T1G Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90SK60T1G 250 Cies ...