APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet

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APTGF50DH60T1G

Manufacturer Part Number
APTGF50DH60T1G
Description
IGBT NPT BRIDGE 600V 65A SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DH60T1G

Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
Symbol
V
V
NPT IGBT Power Module
I
P
I
CM
CES
GE
C
D
Asymmetrical - Bridge
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Pins 3/4 must be shorted together
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Parameter
www.microsemi.com
Application
Features
Benefits
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
APTGF50DH60T1G
-
-
-
-
-
-
-
-
T
T
T
T
T
C
C
C
C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
j
Symmetrical design
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
C
CES
= 50A* @ Tc = 80°C
= 600V
100A @ 500V
Max ratings
±20
600
230
250
65*
50*
Unit
W
V
A
V
1 – 7

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APTGF50DH60T1G Summary of contents

Page 1

... Reverse Bias Safe Operating Area * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DH60T1G V = 600V CES I = 50A 80° ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr CR1 & CR4 are IGBT protection diodes only APTGF50DH60T1G = 25°C unless otherwise specified j Test Conditions Min T = 25° 600V T = 125° 25° ...

Page 3

... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGF50DH60T1G IGBT Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...

Page 4

... Duty cycle 100 =125° =25° Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF50DH60T1G =15V) Output Characteristics (V GE 100 250µs Pulse Test < 0.5% Duty cycle 75 T =125° Collector to Emitter Voltage ( 50A 25° ...

Page 5

... Switching Energy Losses vs Gate Resistance 400V CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50DH60T1G Turn-Off Delay Time vs Collector Current 175 150 V =15V, GE 125 T =125°C J 100 V =15V =25° 400V 2.7Ω ...

Page 6

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50DH60T1G Operating Frequency vs Collector Current 240 200 160 120 80 ZVS hard 40 switching Collector Current (A) C Single Pulse 0 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DH60T1G Single Pulse 0.001 ...

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