APTGT150DA60T1G Microsemi Power Products Group, APTGT150DA60T1G Datasheet

APTGT150DA60T1G
Manufacturer Part Number	APTGT150DA60T1G
Description	IGBT BOOST CHOP 600V 225A SP1
Manufacturer	Microsemi Power Products Group
APTGT150DA60T1G datasheets	1. APTGT150DA60T1G.pdf (5 pages)

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Specifications of APTGT150DA60T1G
Igbt Type	Trench and Field Stop	Configuration	Single
Voltage - Collector Emitter Breakdown (max)	600V	Vce(on) (max) @ Vge, Ic	1.9V @ 15V, 150A
Current - Collector (ic) (max)	225A	Current - Collector Cutoff (max)	250µA
Input Capacitance (cies) @ Vce	9.2nF @ 25V	Power - Max	480W
Input	Standard	Ntc Thermistor	Yes
Mounting Type	Chassis Mount	Package / Case	SP1
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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Boost chopper

Trench + Field Stop IGBT

Power Module

CR1

CR2

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

Symbol

Collector - Emitter Breakdown Voltage

CES

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

RBSOA

Reverse Bias Safe Operating Area

Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater

than 30°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

APTGT150DA60T1G

Application

•

Features

NTC

•

Benefits

•

Parameter

www.microsemi.com

= 600V

CES

= 150A* @ Tc = 80°C

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Trench + Field Stop IGBT

Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

Very low stray inductance

Internal thermistor for temperature monitoring

High level of integration

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

Low profile

RoHS Compliant

Max ratings

600

= 25°C

225 *

= 80°C

150 *

= 25°C

350

±20

= 25°C

480

= 150°C

300A @ 550V

Unit

1 – 5

Download datasheet (274Kb)

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APTGT150DA60T1G Summary of contents
Page 1 ... Reverse Bias Safe Operating Area Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DA60T1G ® Application 11 • ... Page 2 ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DA60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 150A T = 150°C C ... Page 3 ... R Resistance @ 25° 298.15 K 25/ exp SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGT150DA60T1G To heatsink (see application note APT0406 on www.microsemi.com for more information Thermistor temperature 25     Thermistor value   ... Page 4 ... Eoff T = 150° Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 APTGT150DA60T1G =15V =150° =25°C J 1 =25° =25° (V) GE Eon ... Page 5 ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DA60T1G 300 V ...

APTGT150DA60T1G Summary of contents

Page 1
... Reverse Bias Safe Operating Area Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DA60T1G ® Application 11 • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DA60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 150A T = 150°C C ...
Page 3
... R Resistance @ 25° 298.15 K 25/ exp SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGT150DA60T1G To heatsink (see application note APT0406 on www.microsemi.com for more information Thermistor temperature 25     Thermistor value   ...
Page 4
... Eoff T = 150° Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 APTGT150DA60T1G =15V =150° =25°C J 1 =25° =25° (V) GE Eon ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DA60T1G 300 V ...