APTGF15H120T1G Microsemi Power Products Group, APTGF15H120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF15H120T1G
• Description: IGBT MODULE NPT FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF15H120T1G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
50
40
30
20
10
50
40
30
20
10
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
J
25
Breakdown Voltage vs Junction Temp.
V
= 125°C
V
1
CE
2.5
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
50
5
3
T
J
T
12
=25°C
J
=125°C
7.5
4
75
13
5
10
T
14
J
=25°C
GE
T
100
6
J
=15V)
Ic=7.5A
=125°C
Ic=30A
Ic=15A
12.5
15
7
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125
15
16
8
12
10
25
20
15
10
18
16
14
12
10
APTGF15H120T1G
8
6
4
2
0
6
5
4
3
2
1
0
5
0
8
6
4
2
0
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
J
V
= 15A
= 25°C
CE
0.5
Output Characteristics (V
, Collector to Emitter Voltage (V)
20
T
50
J
, Junction Temperature (°C)
T
50
C
, Case Temperature (°C)
1
Gate Charge (nC)
40
Gate Charge
75
1.5
V
CE
75
=600V
60
T
2
100
J
250µs Pulse Test
< 0.5% Duty cycle
V
=25°C
GE
V
CE
80
= 15V
=240V
2.5
GE
100
=10V)
T
V
J
Ic=7.5A
125
=125°C
CE
Ic=30A
Ic=15A
100
=960V
3
3.5
125
120
150
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