APTGF30H60T3G Microsemi Power Products Group, APTGF30H60T3G Datasheet - Page 5
APTGF30H60T3G
Manufacturer Part Number
APTGF30H60T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF30H60T3G.pdf
(6 pages)
Specifications of APTGF30H60T3G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 30A
Current - Collector (ic) (max)
42A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.35nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
50
40
30
20
10
50
40
30
20
10
0.75
0.25
0
0.5
Switching Energy Losses vs Gate Resistance
0.75
0.25
1
0
0
0.5
0
Turn-On Energy Loss vs Collector Current
1
0
0
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
0
I
V
R
CE
V
I
10
CE
G
10
R
CE
, Collector to Emitter Current (A)
CE
I
= 6.8Ω
G
CE
10
= 400V
, Collector to Emitter Current (A)
= 6.8Ω
= 400V
, Collector to Emitter Current (A)
V
T
J
GE
=125°C
5
Gate Resistance (Ohms)
20
20
=15V,
20
Eoff, 30A
V
GE
30
30
= 15V
10
30
40
40
40
T
V
J
15
=125°C,
GE
Tj = 125°C
V
R
=15V
CE
G
50
50
Eon, 30A
50
= 6.8Ω
V
V
T
= 400V
CE
GE
J
= 125°C
20
= 400V
= 15V
60
60
60
www.microsemi.com
25
70
70
70
125
100
1.5
0.5
50
40
30
20
10
70
60
50
40
30
20
10
75
50
25
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
Turn-Off Delay Time vs Collector Current
V
V
R
Current Fall Time vs Collector Current
I
Reverse Bias Safe Operating Area
V
CE
CE
GE
G
APTGF30H60T3G
V
R
I
I
CE
CE
= 6.8Ω
CE
G
CE
10
, Collector to Emitter Current (A)
10
100
10
= 400V
= 15V
V
T
= 6.8Ω
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
GE
= 400V
, Collector to Emitter Current (A)
J
=25°C
V
=15V,
CE
20
20
20
= 400V, V
T
200
J
= 125°C
30
30
30
300
GE
T
J
= 15V, R
= 125°C
T
40
40
40
J
= 25°C
400
T
V
J
G
GE
=125°C
50
50
50
= 6.8Ω
=15V,
500
60
60
60
600
70
70
70
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