APTGT35A120T1G Microsemi Power Products Group, APTGT35A120T1G Datasheet
APTGT35A120T1G
Specifications of APTGT35A120T1G
Related parts for APTGT35A120T1G
APTGT35A120T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGT35A120T1G V = 1200V CES I = 35A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control ® Fast Trench + Field Stop IGBT Technology - Low voltage drop ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGT35A120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGT35A120T1G Min Typ Max IGBT 0.60 Diode 0.95 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... J T =125° 2.5 3 3 =25° =125° =25° (V) GE Eon Eoff 100 IGBT Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT35A120T1G Output Characteristics 125° =17V V =13V =15V = (V) CE Energy losses vs Collector Current 8 Eon V = 600V 15V ...
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... U.S and Foreign patents pending. All Rights Reserved. V =600V CE D=50% R =27Ω =125° =75°C C ZVS (A) C Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT35A120T1G Forward Characteristic of diode =125° =125° =25° 0 (V) F Diode 0 ...