APTGF75DA120T1G Microsemi Power Products Group, APTGF75DA120T1G Datasheet

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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DA120T1G Application 11 • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction ...

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... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF75DA120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF75DA120T1G Min Typ Max IGBT 0.25 Diode 2500 -40 150 -40 125 -40 100 M4 2.5 Min Typ Max 50 3952 Unit °C/W 0.9 V °C 4.7 N.m ...

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... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DA120T1G =15V =25° =125° ( =125° =25° (V) GE 175 150 125 ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DA120T1G V =600V ...