APTGV15H120T3G Microsemi Power Products Group, APTGV15H120T3G Datasheet
APTGV15H120T3G
Specifications of APTGV15H120T3G
Related parts for APTGV15H120T3G
APTGV15H120T3G Summary of contents
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... Solderable terminals both for power and signal for easy PCB mounting 14 • Low profile 13 • Easy paralleling due to positive • RoHS Compliant www.microsemi.com APTGV15H120T3G ® IGBT Q1, Q3: = 1200V ; I = 15A @ Tc = 80° 1200V ; I = 15A @ Tc = 80° Switching frequency kHz - RBSOA & SCSOA rated ...
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... Bus I = 15A 62Ω G Inductive Switching (125° ±15V 600V Bus I = 15A 62Ω ±15V 600V Bus I = 15A 62Ω G www.microsemi.com APTGV15H120T3G Max ratings 1200 T = 25° 80° 25° ± 25°C 115 125°C 30A @ 1150V j Min Typ Max 250 T = 25°C 1.7 2 125° ...
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... 15A 800V R di/dt =200A/µs Parameter Test Conditions 1200V CE V =15V 15A 1mA 20V www.microsemi.com APTGV15H120T3G Min Typ Max 1200 T = 25°C 100 125°C 500 80°C 15 2.8 3.3 3 125°C 2 25°C 240 125°C 290 25°C 260 125°C ...
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... R di/dt =200A/µ Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGV15H120T3G Min Typ Max 1000 150 315 356 125° 125° 0.9 Min Typ Max 1200 T = 25° ...
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... Top Trench + Field Stop IGBT Output Characteristics ( 0 heatsink 17 12 ® typical performance curves =15V =25° =125° 2.5 3 3.5 (V) CE www.microsemi.com APTGV15H120T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics T = 125°C V =17V =13V GE V =15V (V) ...
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... Top Fast diode typical performance curves Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 2.4 2 0.9 1.6 0.7 1.2 0.5 0.8 0.3 0.1 0.4 0.05 0 0.00001 0.0001 APTGV15H120T3G Energy losses vs Collector Current 3 600V 15V 62Ω 125° =125°C 1.5 1 0.5 0 ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 - Junction Temperature (°C) J APTGV15H120T3G Output Characteristics (V =15V 250µs Pulse Test 14 < 0.5% Duty cycle =125° 0 Collector to Emitter Voltage ( 15A 25°C ...
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... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 15A 5 4 Eoff, 15A 100 Gate Resistance (Ohms) APTGV15H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 33Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
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... Rectangular Pulse Duration (Seconds) Forw ard Current vs Forw ard Voltage 25° =25° Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV15H120T3G Operating Frequency vs Collector Current V = 600V 50 33Ω 125° 75°C ZVS C Hard ZCS switching ...