APTGV15H120T3G

Manufacturer Part NumberAPTGV15H120T3G
DescriptionIGBT NPT BST CHOP FULL BRDG SP3
ManufacturerMicrosemi Power Products Group
APTGV15H120T3G datasheets

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Warranty: 60 days

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Specifications of APTGV15H120T3G

Igbt TypeNPT, Trench and Field StopConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 15A
Current - Collector (ic) (max)25ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce1.1nF @ 25VPower - Max115W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Download datasheet (367Kb)Embed
Next
Full - Bridge
NPT & Trench + Field Stop
Power module
13 14
Q1
CR1
CR3
18
19
22
7
23
8
Q2
CR2
CR4
26
27
29
30
31
15
R1
Top switches : Trench + Field Stop IGBT
Bottom switches :
FAST NPT IGBT
28 27 26
25
23 22
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Trench & Field Stop
V
CES
®
IGBT
Fast NPT IGBT Q2, Q4:
V
CES
Application
• Solar converter
Q3
11
Features
10
• Q2, Q4 (FAST Non Punch Through (NPT) IGBT)
Q4
4
• Q1, Q3 (Trench & Field Stop IGBT
3
32
16
• Kelvin emitter for easy drive
®
• Very low stray inductance
®
• High level of integration
• Internal thermistor for temperature monitoring
20
19
18
Benefits
16
• Optimized conduction & switching losses
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• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
14
• Low profile
13
• Easy paralleling due to positive T
10
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• RoHS Compliant
www.microsemi.com
APTGV15H120T3G
®
IGBT Q1, Q3:
= 1200V ; I
= 15A @ Tc = 80°C
C
= 1200V ; I
= 15A @ Tc = 80°C
C
- Switching frequency up to 50 kHz
- RBSOA & SCSOA rated
- Low tail current
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
of V
C
®
)
CEsat
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APTGV15H120T3G Summary of contents

  • Page 1

    ... Solderable terminals both for power and signal for easy PCB mounting 14 • Low profile 13 • Easy paralleling due to positive • RoHS Compliant www.microsemi.com APTGV15H120T3G ® IGBT Q1, Q3: = 1200V ; I = 15A @ Tc = 80° 1200V ; I = 15A @ Tc = 80° Switching frequency kHz - RBSOA & SCSOA rated ...

  • Page 2

    ... Bus I = 15A 62Ω G Inductive Switching (125° ±15V 600V Bus I = 15A 62Ω ±15V 600V Bus I = 15A 62Ω G www.microsemi.com APTGV15H120T3G Max ratings 1200 T = 25° 80° 25° ± 25°C 115 125°C 30A @ 1150V j Min Typ Max 250 T = 25°C 1.7 2 125° ...

  • Page 3

    ... 15A 800V R di/dt =200A/µs Parameter Test Conditions 1200V CE V =15V 15A 1mA 20V www.microsemi.com APTGV15H120T3G Min Typ Max 1200 T = 25°C 100 125°C 500 80°C 15 2.8 3.3 3 125°C 2 25°C 240 125°C 290 25°C 260 125°C ...

  • Page 4

    ... R di/dt =200A/µ Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGV15H120T3G Min Typ Max 1000 150 315 356 125° 125° 0.9 Min Typ Max 1200 T = 25° ...

  • Page 5

    ... Top Trench + Field Stop IGBT Output Characteristics ( 0 heatsink 17 12 ® typical performance curves =15V =25° =125° 2.5 3 3.5 (V) CE www.microsemi.com APTGV15H120T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics T = 125°C V =17V =13V GE V =15V (V) ...

  • Page 6

    ... Top Fast diode typical performance curves Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 2.4 2 0.9 1.6 0.7 1.2 0.5 0.8 0.3 0.1 0.4 0.05 0 0.00001 0.0001 APTGV15H120T3G Energy losses vs Collector Current 3 600V 15V 62Ω 125° =125°C 1.5 1 0.5 0 ...

  • Page 7

    ... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 - Junction Temperature (°C) J APTGV15H120T3G Output Characteristics (V =15V 250µs Pulse Test 14 < 0.5% Duty cycle =125° 0 Collector to Emitter Voltage ( 15A 25°C ...

  • Page 8

    ... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 15A 5 4 Eoff, 15A 100 Gate Resistance (Ohms) APTGV15H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 33Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

  • Page 9

    ... Rectangular Pulse Duration (Seconds) Forw ard Current vs Forw ard Voltage 25° =25° Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV15H120T3G Operating Frequency vs Collector Current V = 600V 50 33Ω 125° 75°C ZVS C Hard ZCS switching ...