APTGF50DSK60T3G

Manufacturer Part NumberAPTGF50DSK60T3G
DescriptionIGBT MODULE NPT BUCK CHOP SP3
ManufacturerMicrosemi Power Products Group
APTGF50DSK60T3G datasheet
 

Specifications of APTGF50DSK60T3G

Igbt TypeNPTConfigurationDual Buck Chopper
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual Buck chopper
NPT IGBT Power Module
13 14
Q1
18
19
22
7
23
8
CR1
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50DSK60T3G
Application
AC and DC motor control
Switched Mode Power Supplies
Q2
Features
11
Non Punch Through (NPT) Fast IGBT
10
-
-
-
-
-
CR2
-
-
-
-
Kelvin emitter for easy drive
32
Very low stray inductance
16
High level of integration
Internal thermistor for temperature monitoring
Benefits
19
18
Outstanding performance at high frequency
16
operation
15
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
14
Low profile
13
Easy paralleling due to positive TC of VCEsat
10
11 12
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
RoHS compliant
Max ratings
600
T
= 25°C
65
C
T
= 80°C
50
C
T
= 25°C
230
C
±20
T
= 25°C
250
C
T
= 125°C
100A@500V
j
www.microsemi.com
V
= 600V
CES
I
= 50A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Unit
V
A
V
W
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APTGF50DSK60T3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DSK60T3G Application • AC and DC motor control • Switched Mode Power Supplies Q2 Features 11 • ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DSK60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50DSK60T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

  • Page 4

    ... Pulse Test < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGF50DSK60T3G =15V) Output Characteristics (V GE 150 =-55°C 250µs Pulse Test J T =25°C < 0.5% Duty cycle J 100 T =125° ...

  • Page 5

    ... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50DSK60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 60 ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DSK60T3G Operating Frequency vs Collector Current 240 ...