APTGF15H120T3G Microsemi Power Products Group, APTGF15H120T3G Datasheet - Page 6

• Manufacturer Part Number: APTGF15H120T3G
• Description: IGBT MODULE NPT FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF15H120T3G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.8
0.6
0.4
0.2
1000
0.00001
100
1
0
10
Capacitance vs Collector to Emitter Voltage
0
0.5
0.3
0.05
0.7
0.1
0.9
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cres
Cies
50
0.01
Single Pulse
120
100
80
60
40
20
0
Operating Frequency vs Collector Current
APTGF15H120T3G
0
switching
0.1
Hard
5
I
C
, Collector Current (A)
ZCS
10
ZVS
1
15
V
D = 50%
R
T
T
J
C
CE
G
= 75°C
= 125°C
= 33Ω
= 600V
20
10
25
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