APTGF90A60T1G Microsemi Power Products Group, APTGF90A60T1G Datasheet

no-image

APTGF90A60T1G

Manufacturer Part Number
APTGF90A60T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF90A60T1G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
NPT IGBT Power Module
I
P
I
CM
CES
GE
C
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
9
7
8
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Q1
Q2
Phase leg
5
1
6
2
CR1
CR2
3
4
Parameter
11
12
NTC
www.microsemi.com
Application
Features
Benefits
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
c
c
c
c
j
APTGF90A60T1G
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
C
CES
= 90A @ Tc = 80°C
= 600V
200A @ 600V
Max ratings
±20
600
110
315
416
90
Unit
W
V
A
V
1 – 6

Related parts for APTGF90A60T1G

APTGF90A60T1G Summary of contents

Page 1

... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF90A60T1G V = 600V CES I = 90A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90A60T1G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF90A60T1G Min Typ Max IGBT 0.3 Diode 0.65 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

Page 4

... Junction Temperature (°C) J =15V =25° =125° =25° Ic=180A Ic=90A Ic=45A 100 125 www.microsemi.com APTGF90A60T1G Output Characteristics (V =10V) GE 250 250µs Pulse Test < 0.5% Duty cycle 200 T =25°C J 150 100 T =125° Collector to Emitter Voltage (V) CE Gate Charge 18 V =120V I = 90A 16 ...

Page 5

... Eon, 180A 15V Eoff, 180A 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90A60T1G Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

Page 6

... Coes 50 Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 200 160 120 www.microsemi.com APTGF90A60T1G Reverse Bias Safe Operating Area 200 400 600 800 V , Collector to Emitter Voltage ( 400V CE ZVS 5Ω 125° 75° ...

Related keywords