APTGF90A60T1G Microsemi Power Products Group, APTGF90A60T1G Datasheet - Page 6

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APTGF90A60T1G

Manufacturer Part Number
APTGF90A60T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF90A60T1G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
CE
0.9
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
www.microsemi.com
Single Pulse
50
0.01
250
200
150
100
200
160
120
50
80
40
0
0
Operating Frequency vs Collector Current
20
0
APTGF90A60T1G
switching
V
Hard
Reverse Bias Safe Operating Area
0.1
CE
ZVS
, Collector to Emitter Voltage (V)
40
200
I
C
, Collector Current (A)
60
ZCS
400
1
80
V
D = 50%
R
T
T
J
C
CE
G
= 125°C
= 75°C
= 5Ω
600
= 400V
100
800
120
10
6 – 6

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