APTGF25DSK120T3G Microsemi Power Products Group, APTGF25DSK120T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF25DSK120T3G
• Description: IGBT MODULE NPT DL BCK CHOP SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF25DSK120T3G

• Igbt Type: NPT
• Configuration: Dual Buck Chopper
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
-50
250µs Pulse Test
< 0.5% Duty cycle
J
Breakdown Voltage vs Junction Temp.
V
= 125°C
1
CE
V
10
2.5
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
-25
T
, Gate to Emitter Voltage (V)
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
5
0
3
T
J
=125°C
12
25
7.5
4
T
J
13
=25°C
50
5
10
T
14
75
J
GE
=25°C
T
6
J
=15V)
Ic=12.5A
=125°C
Ic=50A
Ic=25A
12.5
www.microsemi.com
100
15
7
125
15
16
8
APTGF25DSK120T3G
20
16
12
60
50
40
30
20
10
18
16
14
12
10
8
4
0
6
5
4
3
2
1
0
0
8
6
4
2
0
-50
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
250µs Pulse Test
< 0.5% Duty cycle
V
J
V
GE
= 25A
= 25°C
-25
CE
0.5
-25
Output Characteristics (V
= 15V
, Collector to Emitter Voltage (V)
30
T
J
, Junction Temperature (°C)
T
C
0
, Case Temperature (°C)
1
0
Gate Charge (nC)
60
25
Gate Charge
1.5
25
50
90
V
CE
50
2
=600V
75
120
T
V
J
2.5
=25°C
GE
CE
75
100 125 150
=240V
=10V)
T
V
Ic=12.5A
J
Ic=50A
=125°C
Ic=25A
CE
150
100
=960V
3
3.5
125
180
4 - 6