APTGF25DSK120T3G Microsemi Power Products Group, APTGF25DSK120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGF25DSK120T3G
• Description: IGBT MODULE NPT DL BCK CHOP SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF25DSK120T3G

• Igbt Type: NPT
• Configuration: Dual Buck Chopper
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

160
120
75
70
65
60
55
50
80
40
10
5
4
3
2
1
0
0
8
6
4
2
0
Switching Energy Losses vs Gate Resistance
0
5
5
5
Turn-On Delay Time vs Collector Current
V
V
R
V
T
Turn-On Energy Loss vs Collector Current
CE
Current Rise Time vs Collector Current
V
R
V
R
GE
J
CE
G
= 125°C
CE
G
CE
= 22Ω
G
= 600V
I
I
= 600V
= 15V
CE
CE
I
= 22Ω
10
= 22Ω
CE
= 600V
= 600V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
15
15
15
, Collector to Emitter Current (A)
Gate Resistance (Ohms)
20
25
25
25
V
30
GE
=15V
Eoff, 25A
Eon, 25A
35
35
35
T
V
J
=125°C,
GE
40
V
=15V
GE
T
V
= 15V
J
GE
=25°C,
45
45
45
=15V
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50
55
60
55
55
APTGF25DSK120T3G
400
350
300
250
200
60
50
40
30
20
10
50
45
40
35
30
25
20
0
4
3
2
1
0
0
5
5
5
Turn-Off Energy Loss vs Collector Current
Turn-Off Delay Time vs Collector Current
V
R
Current Fall Time vs Collector Current
V
CE
G
V
Reverse Bias Safe Operating Area
CE
I
V
I
I
R
= 22Ω
CE
CE
CE
CE
= 600V
GE
G
, Collector to Emitter Voltage (V)
T
T
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
= 600V
J
J
= 22Ω
15
15
15
= 15V
= 25°C
V
= 125°C
CE
400
= 600V, V
25
25
25
GE
= 15V, R
800
35
35
35
T
J
= 125°C
V
T
G
GE
J
= 22Ω
V
T
=25°C
T
=15V,
J
GE
J
=125°C
= 25°C
=15V,
45
45
45
1200
55
55
55
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