APTGF50H60T1G Microsemi Power Products Group, APTGF50H60T1G Datasheet - Page 5

• Manufacturer Part Number: APTGF50H60T1G
• Description: IGBT MODULE NPT FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50H60T1G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

60
50
40
30
20
60
50
40
30
20
10
1.5
0.5
0
2
1
0
Switching Energy Losses vs Gate Resistance
2.5
1.5
0.5
0
0
Turn-On Energy Loss vs Collector Current
3
2
1
0
0
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
0
I
CE
V
V
R
R
V
V
T
I
CE
CE
I
G
CE
G
J
, Collector to Emitter Current (A)
CE
CE
GE
25
25
= 125°C
= 2.7Ω
= 2.7Ω
25
, Collector to Emitter Current (A)
= 400V
= 400V
, Collector to Emitter Current (A)
= 400V
= 15V
T
V
J
GE
=125°C
5
Gate Resistance (Ohms)
=15V,
Eon, 50A
50
50
50
10
75
75
75
T
V
J
15
=125°C,
GE
V
100
100
100
=15V
Tj = 125°C
V
R
GE
CE
G
= 15V
= 2.7Ω
= 400V
Eon, 50A
Eoff, 50A
20
125
125
125
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150
150
150
25
120
100
175
150
125
100
2.5
1.5
0.5
60
50
40
30
20
10
80
60
40
20
75
50
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
APTGF50H60T1G
Turn-Off Delay Time vs Collector Current
Current Fall Time vs Collector Current
I
CE
V
V
R
Reverse Bias Safe Operating Area
I
I
V
V
V
R
CE
CE
CE
G
CE
, Collector to Emitter Current (A)
CE
CE
GE
G
25
= 2.7Ω
25
25
, Collector to Emitter Current (A)
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
= 400V
= 2.7Ω
= 400V, V
= 400V
= 15V
T
J
= 125°C
200
50
50
50
GE
= 15V, R
75
75
75
T
J
T
= 25°C
J
= 125°C
V
G
T
400
GE
= 2.7Ω
J
100
100
100
=25°C
=15V,
T
V
J
GE
=125°C
=15V,
125
125
125
600
150
150
150
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