APTGF50H60T1G Microsemi Power Products Group, APTGF50H60T1G Datasheet - Page 6

• Manufacturer Part Number: APTGF50H60T1G
• Description: IGBT MODULE NPT FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50H60T1G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
0.05
V
0.9
0.5
0.3
0.7
0.1
CE
, Collector to Emitter Voltage (V)
10
Cres
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
www.microsemi.com
50
Single Pulse
0.01
240
200
160
120
80
40
0
0
APTGF50H60T1G
Operating Frequency vs Collector Current
0.1
switching
hard
20
I
C
, Collector Current (A)
40
ZVS
1
60
V
D = 50%
R
T
T
J
C
CE
G
= 125°C
= 75°C
= 2.7Ω
= 400V
80
ZCS
100
10
6 – 6