APTGT30A170T1G Microsemi Power Products Group, APTGT30A170T1G Datasheet

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APTGT30A170T1G

Manufacturer Part Number
APTGT30A170T1G
Description
IGBT MODULE TRENCH PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT30A170T1G

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
45A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
210W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
GE
C
D
Trench + Field Stop IGBT
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
9
7
8
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Power Module
Q1
Q2
Phase leg
5
1
6
2
CR1
CR2
3
4
Parameter
11
12
NTC
®
www.microsemi.com
Application
Features
Benefits
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
APTGT30A170T1G
T
T
T
T
T
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
C
C
C
C
Symmetrical design
j
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
V
I
C
CES
= 30A @ Tc = 80°C
= 1700V
60A@1600V
Max ratings
1700
±20
210
45
30
70
®
Technology
Unit
W
V
A
V
1 – 5

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APTGT30A170T1G Summary of contents

Page 1

... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGT30A170T1G V = 1700V CES I = 30A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control ® Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT30A170T1G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 30A T = 125°C C ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGT30A170T1G Min Typ Max IGBT 0.60 Diode 0.70 3500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

Page 4

... GE T =25° =125° 2 =25° =125° (V) GE Eon Eoff 100 120 IGBT Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT30A170T1G Output Characteristics 125° =19V =15V =13V = (V) CE Energy losses vs Collector Current 900V Eon 15V Ω ...

Page 5

... U.S and Foreign patents pending. All Rights Reserved. V =900V CE D=50% R =18 Ω =125° =75°C C hard Diode Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT30A170T1G Forward Characteristic of diode 100 T =25° =125° =125° 0 ...

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