APTGF50A120T1G Microsemi Power Products Group, APTGF50A120T1G Datasheet
APTGF50A120T1G
Specifications of APTGF50A120T1G
Related parts for APTGF50A120T1G
APTGF50A120T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF50A120T1G V = 1200V CES I = 50A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50A120T1G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGF50A120T1G Min Typ Max IGBT 0.4 Diode 0.65 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... Junction Temperature (°C) J =15V =125° =25° =25° Ic=100A Ic=50A Ic=25A 100 125 www.microsemi.com APTGF50A120T1G Output Characteristics (V =10V) GE 250µs Pulse Test < 0.5% Duty cycle T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =240V I = 50A 25°C V =600V =960V 100 150 200 ...
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... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) APTGF50A120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50A120T1G 120 100 ...