APTGF50A120T1G

Manufacturer Part NumberAPTGF50A120T1G
DescriptionIGBT MODULE NPT PHASE LEG SP1
ManufacturerMicrosemi Power Products Group
APTGF50A120T1G datasheet
 


Specifications of APTGF50A120T1G

Igbt TypeNPTConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce3.45nF @ 25VPower - Max312W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP1
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Phase leg
NPT IGBT Power Module
5
6
Q1
CR1
7
8
Q2
CR2
9
10
1
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
11
Features
3
NTC
4
12
Benefits
Parameter
www.microsemi.com
APTGF50A120T1G
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Max ratings
1200
T
= 25°C
75
c
T
= 80°C
50
c
T
= 25°C
150
c
±20
T
= 25°C
312
c
T
= 150°C
100A @ 1200V
j
Unit
V
A
V
W
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APTGF50A120T1G Summary of contents

  • Page 1

    ... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF50A120T1G V = 1200V CES I = 50A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50A120T1G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF50A120T1G Min Typ Max IGBT 0.4 Diode 0.65 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

  • Page 4

    ... Junction Temperature (°C) J =15V =125° =25° =25° Ic=100A Ic=50A Ic=25A 100 125 www.microsemi.com APTGF50A120T1G Output Characteristics (V =10V) GE 250µs Pulse Test < 0.5% Duty cycle T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =240V I = 50A 25°C V =600V =960V 100 150 200 ...

  • Page 5

    ... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) APTGF50A120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50A120T1G 120 100 ...