APTGT75DSK60T3G

Manufacturer Part NumberAPTGT75DSK60T3G
DescriptionIGBT MOD TRENCH DL BUCK CHOP SP3
ManufacturerMicrosemi Power Products Group
APTGT75DSK60T3G datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of APTGT75DSK60T3G

Igbt TypeTrench and Field StopConfigurationDual Buck Chopper
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic1.9V @ 15V, 75A
Current - Collector (ic) (max)100ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce4.62nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (264Kb)Embed
Next
Dual Buck chopper
Trench + Field Stop IGBT
Power Module
13 14
Q1
18
19
22
7
23
8
CR1
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT75DSK60T3G
V
CES
®
I
= 75A @ Tc = 80°C
C
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
Q2
11
Features
•
Trench + Field Stop IGBT
10
CR2
•
Kelvin emitter for easy drive
32
•
Very low stray inductance
16
•
High level of integration
•
Internal thermistor for temperature monitoring
19
18
Benefits
16
•
Stable temperature behavior
15
•
Very rugged
•
Solderable terminals for easy PCB mounting
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
14
•
Easy paralleling due to positive TC of VCEsat
13
•
Low profile
10
11 12
•
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
•
RoHS Compliant
Parameter
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
T
= 150°C
J
www.microsemi.com
= 600V
®
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
Max ratings
Unit
600
V
100
A
75
140
±20
V
250
W
150A @ 550V
1 - 5

Related parts for APTGT75DSK60T3G

Part Number DescriptionManufacturer Datasheet
  APTGT75DA60T1G IGBT 600V 100A 250W SP1 Microsemi Power Products Group
  APTGT75DA120T1G IGBT 1200V 110A 357W SP1 Microsemi Power Products Group
  APTGT75DDA60T3G IGBT MOD TRENCH DL BST CHOP SP3 Microsemi Power Products Group
  APTGT75DA170T1G IGBT 1700V 130A 465W SP1 Microsemi Power Products Group
  APTGT75DA120TG IGBT 1200V 110A 357W SP4 Microsemi Power Products Group
  APTGT75DA170D1G IGBT 1700V 120A 520W D1 Microsemi Power Products Group
  APTGT75DU120TG IGBT MOD TRENCH DUAL SOURCE SP4 Microsemi Power Products Group
  APTGT75DH120TG IGBT MOD TRENCH ASYM BRIDGE SP4 Microsemi Power Products Group
  APTGT75DA120D1G IGBT 1200V 110A 357W D1 Microsemi Power Products Group
  APTGT75DH60TG IGBT MOD TRENCH ASYM BRIDGE SP4 Microsemi Power Products Group
  APTGT75X60T3G IGBT MOD TRENCH 3PH BRIDGE SP3 Microsemi Power Products Group
  APTGT75SK60T1G IGBT 600V 100A 250W SP1 Microsemi Power Products Group
  APTGT75A60T1G IGBT PHASE LEG TRENCH 600V SP1 Microsemi Power Products Group
  APTGT75SK120T1G IGBT 1200V 110A 357W SP1 Microsemi Power Products Group
  APTGT75H60T1G IGBT MOD TRENCH FULL BRIDGE SP1 Microsemi Power Products Group

APTGT75DSK60T3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75DSK60T3G V CES ® 75A @ Tc = 80°C C Application • AC and DC motor control • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75DSK60T3G = 25°C unless otherwise specified j Test Conditions Min 600V 25°C V =15V 75A T = 150°C ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGT75DSK60T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGT75DSK60T3G =15V) GE 150 T J 125 100 T =150° 2.5 3 Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75DSK60T3G Forward Characteristic of diode 150 ...

Related keywords:

  • aptgt75x60t3g
  • aptgt100tl60t3g
  • aptgt300du170g
  • aptgt50ta60pg
  • aptgt600a60g
  • aptgt600u120d4g
  • aptgt600u170d4g
  • aptgt750u60d4g
  • aptgt75a120t1g
  • aptgt75da120tg
  • aptgt75du120tg
  • aptgt75h60t3g
  • aptgt75sk120tg
  • aptgt75tl60t3g
  • aptgt100du170tg
  • APTGT75DSK60T3G datasheet
  • APTGT75DSK60T3G data sheet
  • APTGT75DSK60T3G pdf datasheet
  • APTGT75DSK60T3G component
  • APTGT75DSK60T3G part
  • APTGT75DSK60T3G distributor
  • APTGT75DSK60T3G RoHS
  • APTGT75DSK60T3G datasheet download