APTGF25H120T1G Microsemi Power Products Group, APTGF25H120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF25H120T1G
• Description: IGBT MODULE NPT FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF25H120T1G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
80
60
40
20
60
50
40
30
20
10
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
J
25
Breakdown Voltage vs Junction Temp.
V
= 125°C
V
1
CE
2.5
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
T
Transfer Characteristics
11
J
50
=25°C
5
3
12
T
J
7.5
=125°C
4
75
T
J
13
=125°C
5
10
T
14
J
=25°C
GE
100
6
=15V)
Ic=12.5A
Ic=50A
Ic=25A
12.5
15
7
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125
15
16
8
16
12
40
30
20
10
18
16
14
12
10
APTGF25H120T1G
8
4
0
6
5
4
3
2
1
0
0
8
6
4
2
0
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
J
V
= 25A
= 25°C
CE
Output Characteristics (V
0.5
, Collector to Emitter Voltage (V)
30
T
50
J
, Junction Temperature (°C)
T
50
C
, Case Temperature (°C)
1
Gate Charge (nC)
60
Gate Charge
75
1.5
T
75
90
J
V
=25°C
CE
2
100
=600V
250µs Pulse Test
< 0.5% Duty cycle
V
GE
120
= 15V
V
2.5
GE
CE
100
=240V
=10V)
T
V
Ic=25A
Ic=12.5A
J
125
=125°C
Ic=50A
CE
150
=960V
3
3.5
125
180
150
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