APTGT30X60T3G

Manufacturer Part NumberAPTGT30X60T3G
DescriptionIGBT MOD TRENCH 3PH BRIDGE SP3
ManufacturerMicrosemi Power Products Group
APTGT30X60T3G datasheets

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Warranty: 60 days

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Specifications of APTGT30X60T3G

Igbt TypeTrench and Field StopConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic1.9V @ 15V, 30A
Current - Collector (ic) (max)50ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce1.6nF @ 25VPower - Max90W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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3 Phase bridge
Trench + Field Stop IGBT
Power Module
15
16
23
19
25
20
18
8
11
7
10
12
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26
25
23 22
29
30
31
32
2
3
4
7
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
®
Application
31
29
14
Features
30
22
28
R1
4
13
3
2
Benefits
20
19
18
16
15
14
13
8
10
11 12
Parameter
www.microsemi.com
APTGT30X60T3G
V
= 600V
CES
I
= 30A @ Tc = 80°C
C
Motor control
®
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
Max ratings
600
T
= 25°C
50
C
T
= 80°C
30
C
T
= 25°C
60
C
±20
T
= 25°C
90
C
T
= 150°C
60A @ 550V
J
Unit
V
A
V
W
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APTGT30X60T3G Summary of contents

  • Page 1

    ... Benefits Parameter www.microsemi.com APTGT30X60T3G V = 600V CES I = 30A @ Tc = 80°C C • Motor control ® • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT30X60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 30A T = 150°C C ...

  • Page 3

    ... R : Thermistor value     − B       heatsink 17 12 www.microsemi.com APTGT30X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 1.6 Diode 2.45 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...

  • Page 4

    ... GE T =150° =25°C J 1 =25° =25° (V) GE Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT30X60T3G Output Characteristics 60 V =19V T = 150° =13V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 300V 15V GE Eoff R = 10Ω ...

  • Page 5

    ... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =10Ω =150° =85° (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT30X60T3G Forward Characteristic of diode =125° =150° =25° 0.4 0.8 1 ...