APTGT75DA170T1G

Manufacturer Part NumberAPTGT75DA170T1G
DescriptionIGBT 1700V 130A 465W SP1
ManufacturerMicrosemi Power Products Group
APTGT75DA170T1G datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of APTGT75DA170T1G

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1700VVce(on) (max) @ Vge, Ic2.4V @ 15V, 75A
Current - Collector (ic) (max)130ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce6.8nF @ 25VPower - Max465W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP1
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (280Kb)Embed
Next
Boost chopper
Trench + Field Stop IGBT
Power Module
5
6
CR1
3
4
Q2
CR2
9
10
1
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT75DA170T1G
®
Application
11
Features
NTC
12
Benefits
Parameter
www.microsemi.com
V
= 1700V
CES
I
= 75A @ Tc = 80°C
C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
®
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Max ratings
1700
T
= 25°C
130
C
T
= 80°C
75
C
T
= 25°C
150
C
±20
T
= 25°C
465
C
T
= 125°C
150A @ 1600V
j
Unit
V
A
V
W
1 – 5

APTGT75DA170T1G Summary of contents

  • Page 1

    ... CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75DA170T1G ® Application 11 • • • Features NTC • 12 • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75DA170T1G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 75A T = 125°C C ...

  • Page 3

    ... R Resistance @ 25° 298.15 K 25/ exp SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGT75DA170T1G To heatsink (see application note APT0406 on www.microsemi.com for more information Thermistor temperature 25     Thermistor value   ...

  • Page 4

    ... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.3 0.1 0.05 0.1 0.05 0 0.00001 0.0001 APTGT75DA170T1G =15V =25° =125° ( =25° =125° (V) GE 175 150 Eon ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75DA170T1G V =900V ...