APTGF15X120T3G Microsemi Power Products Group, APTGF15X120T3G Datasheet

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... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGF15X120T3G V = 1200V CES I = 15A @ Tc = 80°C C • Motor control • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...

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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF15X120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

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... R : Thermistor value     − B       heatsink 17 12 www.microsemi.com APTGF15X120T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.9 Diode 2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit °C/W V ° ...

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... Junction Temperature (°C) J =15V =25° =125° =25°C J 7.5 10 12.5 15 Ic=30A Ic=15A Ic=7. 100 125 www.microsemi.com APTGF15X120T3G Output Characteristics (V =10V 250µs Pulse Test 14 < 0.5% Duty cycle 12 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 15A ...

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... Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 15A 5 4 Eoff, 15A 100 Gate Resistance (Ohms) www.microsemi.com APTGF15X120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 33Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125° 25° ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF15X120T3G Operating Frequency vs Collector Current 120 ...