APTGF15X120T3G Microsemi Power Products Group, APTGF15X120T3G Datasheet - Page 4

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APTGF15X120T3G

Manufacturer Part Number
APTGF15X120T3G
Description
IGBT MODULE NPT 3PH BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF15X120T3G

Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 15A
Current - Collector (ic) (max)
25A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
-50
J
Breakdown Voltage vs Junction Temp.
V
= 125°C
V
1
CE
2.5
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
-25
T
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
5
0
T
3
J
=125°C
12
7.5
25
4
13
50
T
5
10
J
=25°C
T
14
J
75
=25°C
GE
T
6
J
=15V)
Ic=7.5A
=125°C
Ic=30A
Ic=15A
12.5
100
15
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7
125
15
16
8
16
14
12
10
40
35
30
25
20
15
10
18
16
14
12
10
8
6
4
2
0
6
5
4
3
2
1
0
5
0
8
6
4
2
0
-50
-50
0
APTGF15X120T3G
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
250µs Pulse Test
< 0.5% Duty cycle
V
C
J
V
GE
= 15A
= 25°C
-25
CE
Output Characteristics (V
0.5
-25
= 15V
, Collector to Emitter Voltage (V)
20
T
J
, Junction Temperature (°C)
T
C
0
, Case Temperature (°C)
1
0
Gate Charge (nC)
40
25
Gate Charge
1.5
25
V
CE
=600V
50
60
50
2
V
75
CE
80
=240V
2.5
GE
75
100 125 150
=10V)
T
T
V
J
J
=25°C
=125°C
CE
Ic=30A
Ic=15A
Ic=7.5A
100
=960V
100
3
3.5
125
120
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