APTGF30X60T3G Microsemi Power Products Group, APTGF30X60T3G Datasheet
APTGF30X60T3G
Specifications of APTGF30X60T3G
Related parts for APTGF30X60T3G
APTGF30X60T3G Summary of contents
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... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGF30X60T3G V = 600V CES I = 30A @ Tc = 80°C C • Motor control • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF30X60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...
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... R : Thermistor value − B heatsink 17 12 www.microsemi.com APTGF30X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.9 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...
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... J T =-55° 25°C J 250µs Pulse Test < 0.5% Duty cycle Ic=60A Ic=30A Ic=15A 100 125 www.microsemi.com APTGF30X60T3G Output Characteristics (V =10V) GE 100 250µs Pulse Test < 0.5% Duty cycle T =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge 18 ...
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... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) www.microsemi.com APTGF30X60T3G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
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... U.S and Foreign patents pending. All Rights Reserved. 240 200 Cies 160 120 Coes 80 Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF30X60T3G Operating Frequency vs Collector Current V = 400V 50 6.8Ω 125° 75°C C hard switching 0 10 ...