APTGF30X60T3G Microsemi Power Products Group, APTGF30X60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF30X60T3G
• Description: IGBT MODULE NPT 2PH BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30X60T3G

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
100
120
75
50
25
90
60
30
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
-25
8
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
0
10
4
T
J
25
=125°C
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
= 25°C
12
6
50
T
J
=-55°C
GE
7
T
75
J
=15V)
3
=-55°C
T
T
J
14
=25°C
8
J
=125°C
Ic=60A
Ic=15A
Ic=30A
100 125
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9
10
16
4
100
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
75
50
25
0
8
6
4
2
0
0
4
3
2
1
0
-50 -25
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
Ic=60A
Ic=30A
250µs Pulse Test
< 0.5% Duty cycle
I
T
Ic=15A
V
C
APTGF30X60T3G
J
Output Characteristics (V
CE
= 30A
= 25°C
-25
T
20
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
0
1
0
40
Gate Charge (nC)
V
25
Gate Charge
CE
T
J
=300V
=25°C
25
50
V
60
CE
2
250µs Pulse Test
< 0.5% Duty cycle
V
=120V
50
GE
75
= 15V
80
GE
75
T
T
100 125 150
J
J
=125°C
=10V)
=-55°C
3
V
CE
100
100
=480V
125
120
4
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