APTGF25H120T3G Microsemi Power Products Group, APTGF25H120T3G Datasheet

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APTGF25H120T3G

Manufacturer Part Number
APTGF25H120T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF25H120T3G

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 25A
Current - Collector (ic) (max)
40A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.65nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
All multiple inputs and outputs must be shorted together
P
I
CM
CES
C
GE
D
18
19
26
27
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Example: 13/14 ; 29/30 ; 22/23 …
2
Full - Bridge
15
Q1
Q2
29
3
25
4
CR2
30
CR1
Parameter
13 14
22
23
23 22
CR4
7
7
8
CR3
31
8
R1
20
Q3
Q4
32
10
19
18
11 12
16
16
15
14
13
11
10
4
3
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
50A@1150V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive T
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
1200
APTGF25H120T3G
100
±20
208
40
25
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
= 25A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
®
CEsat
1 - 6

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APTGF25H120T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF25H120T3G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Q3 11 • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RM I Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGF25H120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF25H120T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

Page 4

... J 250µs Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 - Junction Temperature (°C) J APTGF25H120T3G =15V 250µs Pulse Test =25°C < 0.5% Duty cycle =125° 25A 25° ...

Page 5

... Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF25H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125° ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF25H120T3G Operating Frequency vs Collector Current 120 ...

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