APT50GF120JRDQ3 Microsemi Power Products Group, APT50GF120JRDQ3 Datasheet

IGBT 1200V 120A 521W SOT227

APT50GF120JRDQ3

Manufacturer Part Number
APT50GF120JRDQ3
Description
IGBT 1200V 120A 521W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50GF120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 75A
Current - Collector (ic) (max)
120A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
5.32nF @ 25V
Power - Max
521W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GF120JRDQ3MI
APT50GF120JRDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GF120JRDQ3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT50GF120JRDQ3
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT50GF120JRDQ3
Quantity:
122
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Anti-parallel Diode
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
FAST IGBT & FRED
1
(V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 100°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 700µA, T
GE
GE
C
C
= 0V, I
= 75A, T
= 75A, T
= 0V, T
= 0V, T
C
j
= 750µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
4.5
APT50GF120JRDQ3
225A @ 1200V
APT50GF120JRDQ3
-55 to 150
1200
±30
120
225
521
300
TYP
64
5.5
2.5
3.1
APT50GF120JRDQ3
ISOTOP
1200V
G
MAX
±100
0.75
6.5
3.0
5.5
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
mA
°C
nA

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APT50GF120JRDQ3 Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT50GF120JRDQ3 APT50GF120JRDQ3 ISOTOP ® 25°C unless otherwise specified. C APT50GF120JRDQ3 1200 ±30 120 64 225 225A @ 1200V 521 -55 to 150 300 MIN TYP MAX 1200 4.5 5.5 6.5 2.5 3.0 3.1 2 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V -55°C J 140 120 T = 25°C J 100 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T ...

Page 4

V = 15V 800V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = = ...

Page 5

... Figure 18,Minimim Switching Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS (° ° 125 800V 1.0Ω Figure 20, Operating Frequency vs Collector Current APT50GF120JRDQ3 200 400 600 800 1000 1200 1400 V , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 ° min (f max f = max1 ° ...

Page 6

APT60DQ120 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125° 10% t d(on 90% 5% 10% Switching Energy T ...

Page 7

... EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT50GF120JRDQ3 = 25°C unless otherwise specified. C APT50GF120JRDQ3 60 73 540 MIN TYP MAX 2.8 3.48 2.17 MIN ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. ...

Page 9

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT50GF120JRDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

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