APTGT50DA120TG

Manufacturer Part NumberAPTGT50DA120TG
DescriptionIGBT 1200V 75A 277W SP4
ManufacturerMicrosemi Power Products Group
APTGT50DA120TG datasheets

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Warranty: 60 days

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Specifications of APTGT50DA120TG

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce3.6nF @ 25VPower - Max277W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Boost chopper
Fast Trench + Field Stop IGBT
Power Module
VBUS
VB US SENS E
CR1
Q2
G2
E2
0/VBU S
G2
E2
VBUS
0/VBUS
E2
VBUS
SENSE
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT50DA120TG
®
Application
NT C2
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction
Features
•
Fast Trench + Field Stop IGBT
OUT
NT C1
•
Kelvin emitter for easy drive
•
Very low stray inductance
•
High level of integration
•
Internal thermistor for temperature monitoring
Benefits
•
Stable temperature behavior
OUT
•
Very rugged
•
Solderable terminals for easy PCB mounting
OUT
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
NTC2
Easy paralleling due to positive TC of VCEsat
NTC1
•
Low profile
•
RoHS Compliant
Max ratings
1200
T
= 25°C
75
C
T
= 80°C
50
C
T
= 25°C
100
C
±20
T
= 25°C
277
C
T
= 125°C
100A @ 1150V
j
www.microsemi.com
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
®
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
-
Lead frames for power connections
Unit
V
A
V
W
1 - 5

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APTGT50DA120TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT50DA120TG ® Application NT C2 • AC and DC motor control • Switched Mode Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT50DA120TG = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 50A T = 125°C C ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT50DA120TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... T = 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT50DA120TG =15V) GE 100 80 T =125° 2.5 3 3.5 0 Energy losses vs Collector Current =25° =125°C ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT50DA120TG Forward Characteristic of diode 150 ...

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