APTGT35H120T3G

Manufacturer Part NumberAPTGT35H120T3G
DescriptionIGBT MOD TRENCH FULL BRIDGE SP3
ManufacturerMicrosemi Power Products Group
APTGT35H120T3G datasheets

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Specifications of APTGT35H120T3G

Igbt TypeTrench and Field StopConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 35A
Current - Collector (ic) (max)55ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.5nF @ 25VPower - Max208W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Download datasheet (263Kb)Embed
Next
Full - Bridge
Fast Trench + Field Stop IGBT
Power Module
13 14
Q1
Q3
CR1
CR3
18
19
22
7
23
8
Q2
Q4
CR2
CR4
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT35H120T3G
®
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
11
•
Motor control
10
Features
•
Fast Trench + Field Stop IGBT
-
-
-
4
-
-
3
-
-
-
32
•
Kelvin emitter for easy drive
16
•
Low stray inductance
•
High level of integration
•
Internal thermistor for temperature monitoring
19
18
Benefits
16
•
Outstanding performance
15
operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
14
easy PCB mounting
13
•
Low profile
10
11 12
•
Easy paralleling due to positive TC of VCEsat
•
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
•
RoHS Compliant
Max ratings
1200
T
= 25°C
55
C
T
= 80°C
35
C
T
= 25°C
70
C
±20
T
= 25°C
208
C
T
= 125°C
70A@1150V
j
www.microsemi.com
V
= 1200V
CES
I
= 35A @ Tc = 80°C
C
®
Technology
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
at
high frequency
Unit
V
A
V
W
1 - 5

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APTGT35H120T3G Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT35H120T3G ® Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT35H120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25° 15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on APTGT35H120T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGT35H120T3G =15V =125° 2.5 3 3.5 Energy losses vs Collector Current 600V CE =25° ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT35H120T3G Forward Characteristic of diode 80 ...

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