APTGF50DU120TG Microsemi Power Products Group, APTGF50DU120TG Datasheet - Page 5

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APTGF50DU120TG

Manufacturer Part Number
APTGF50DU120TG
Description
IGBT MODULE NPT DUAL SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DU120TG

Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
180
140
100
18
16
14
12
10
45
40
35
30
25
60
20
28
24
20
16
12
8
6
4
2
0
8
4
0
Switching Energy Losses vs Gate Resistance
0
0
0
0
Turn-On Delay Time vs Collector Current
Turn-On Energy Loss vs Collector Current
V
R
V
Current Rise Time vs Collector Current
V
T
CE
V
R
G
Eon, 50A
CE
J
CE
G
GE
I
= 5Ω
= 125°C
I
V
CE
= 600V
CE
I
= 5Ω
CE
= 600V
= 600V
CE
R
= 15V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
10
25
G
25
, Collector to Emitter Current (A)
25
= 600V
= 5Ω
Gate Resistance (Ohms)
50
20
50
50
V
T
GE
V
J
=125°C,
GE
=15V
Eoff, 25A
=15V
75
75
30
75
T
V
V
J
GE
=25°C,
GE
=15V
= 15V
Eoff, 50A
100
100
100
Eon, 25A
40
125
125
125
50
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400
350
300
250
200
50
40
30
20
8
6
4
2
0
8
6
4
2
0
0
0
0
0
APTGF50DU120TG
Turn-Off Energy Loss vs Collector Current
Eoff, 50A
Switching Energy Losses vs Junction Temp.
V
Turn-Off Delay Time vs Collector Current
V
V
R
CE
Current Fall Time vs Collector Current
R
GE
CE
G
V
G
I
I
V
I
CE
= 600V
= 5Ω
CE
CE
R
CE
= 15V
= 5Ω
= 600V
GE
G
, Collector to Emitter Current (A)
T
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
25
= 600V
25
25
25
= 15V
= 5Ω
J
T
, Junction Temperature (°C)
V
J
CE
= 125°C
= 600V, V
50
50
50
50
T
J
= 25°C
GE
= 15V, R
75
75
T
75
75
V
J
T
T
Eon, 50A
GE
= 125°C
V
T
J
J
=25°C
J
= 25°C
GE
=15V,
=125°C
G
=15V,
= 5Ω
Eoff, 25A
Eon, 25A
100
100
100
100
125
125
125
125
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