APTGT100DA120TG

Manufacturer Part NumberAPTGT100DA120TG
DescriptionIGBT 1200V 140A 480W SP4
ManufacturerMicrosemi Power Products Group
APTGT100DA120TG datasheets

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Warranty: 60 days

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Specifications of APTGT100DA120TG

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 100A
Current - Collector (ic) (max)140ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce7.2nF @ 25VPower - Max480W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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All ratings @ T
Electrical Characteristics
Symbol Characteristic
I
Zero Gate Voltage Collector Current
CES
V
Collector Emitter Saturation Voltage
CE(sat)
V
Gate Threshold Voltage
GE(th)
I
Gate – Emitter Leakage Current
GES
Dynamic Characteristics
Symbol Characteristic
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
E
Turn on Energy
on
E
Turn off Energy
off
Chopper diode ratings and characteristics
Symbol Characteristic
V
Maximum Peak Repetitive Reverse Voltage
RRM
I
Maximum Reverse Leakage Current
RM
I
DC Forward Current
F
V
Diode Forward Voltage
F
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
E
Reverse Recovery Energy
r
APTGT100DA120TG
= 25°C unless otherwise specified
j
Test Conditions
V
= 0V, V
= 1200V
GE
CE
T
= 25°C
V
=15V
j
GE
I
= 100A
T
= 125°C
C
j
V
= V
, I
= 2 mA
GE
CE
C
V
= 20V, V
= 0V
GE
CE
Test Conditions
V
= 0V
GE
V
= 25V
CE
f = 1MHz
Inductive Switching (25°C)
V
= ±15V
GE
V
= 600V
Bus
I
= 100A
C
R
= 3.9Ω
G
Inductive Switching (125°C)
V
= ±15V
GE
V
= 600V
Bus
I
= 100A
C
R
= 3.9Ω
G
V
= ±15V
GE
T
= 125°C
j
V
= 600V
Bus
I
= 100A
C
T
= 125°C
j
R
= 3.9Ω
G
Test Conditions
Min
1200
T
= 25°C
j
V
=1200V
R
T
= 125°C
j
Tc = 80°C
I
= 100A
T
= 25°C
F
j
V
= 0V
T
= 125°C
GE
j
T
= 25°C
j
T
= 125°C
j
I
= 100A
F
T
= 25°C
V
= 600V
j
R
T
= 125°C
di/dt =2000A/µs
j
T
= 25°C
j
T
= 125°C
j
www.microsemi.com
Min
Typ
Max
Unit
250
µA
1.4
1.7
2.1
V
2.0
5.0
5.8
6.5
V
400
nA
Min
Typ
Max
Unit
7200
pF
400
300
260
30
ns
420
70
290
50
ns
520
90
10
mJ
10
Typ
Max
Unit
V
250
µA
500
100
A
1.6
2.1
V
1.6
170
ns
280
9
µC
18
5
mJ
9
2 - 5

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