APTGF100A120T3WG Microsemi Power Products Group, APTGF100A120T3WG Datasheet
APTGF100A120T3WG
Specifications of APTGF100A120T3WG
Related parts for APTGF100A120T3WG
APTGF100A120T3WG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF100A120T3WG 31 Application • Welding converters Features • Non Punch Through (NPT) Fast IGBT NTC • ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF100A120T3WG = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 100A T = 125°C C ...
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... 298.15 K 25/85 25 ∆B ⎡ T exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF100A120T3WG Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...
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... CE V =15V 100A 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.1 0.04 0.05 0 0.00001 0.0001 APTGF100A120T3WG =15V) GE 200 175 =25°C 150 125 100 =125° ( =25° ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF100A120T3WG Forward Characteristic of diode 120 ...