APTGT150DU60TG

Manufacturer Part NumberAPTGT150DU60TG
DescriptionIGBT MOD TRENCH DUAL SOURCE SP4
ManufacturerMicrosemi Power Products Group
APTGT150DU60TG datasheets

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Warranty: 60 days

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Specifications of APTGT150DU60TG

Igbt TypeTrench and Field StopConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic1.9V @ 15V, 150A
Current - Collector (ic) (max)225ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce9.2nF @ 25VPower - Max480W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual common source
Trench + Field Stop IGBT
Power Module
C1
C2
Q1
G1
E1
E
NTC1
G2
E2
C1
E
E1
E2
G1
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT150DU60TG
®
Application
•
AC Switches
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
Q2
G2
Features
•
Trench + Field Stop IGBT
-
E2
-
-
-
NTC2
-
-
-
-
•
Kelvin emitter for easy drive
•
Very low stray inductance
-
-
•
High level of integration
•
Internal thermistor for temperature monitoring
Benefits
C2
•
Stable temperature behavior
•
Very rugged
C2
•
Solderable terminals for easy PCB mounting
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
NTC2
•
Easy paralleling due to positive TC of VCEsat
NTC1
•
Low profile
•
RoHS Compliant
Max ratings
600
T
= 25°C
225
C
T
= 80°C
150
C
T
= 25°C
350
C
±20
T
= 25°C
480
C
T
= 150°C
300A @ 550V
j
www.microsemi.com
V
= 600V
CES
I
= 150A @ Tc = 80°C
C
®
Technology
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
Unit
V
A
V
W
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APTGT150DU60TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DU60TG ® Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DU60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 150A T = 150°C C ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT150DU60TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT150DU60TG =15V) GE 300 T J 250 200 T =150°C J 150 100 2.5 3 (V) Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DU60TG Forward Characteristic of diode 300 ...

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