APTGT30H170T3G Microsemi Power Products Group, APTGT30H170T3G Datasheet
APTGT30H170T3G
Specifications of APTGT30H170T3G
Related parts for APTGT30H170T3G
APTGT30H170T3G Summary of contents
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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT30H170T3G ® Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...
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... E Reverse Recovery Energy r Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ exp APTGT30H170T3G = 25°C unless otherwise specified j Test Conditions 1700V 15V T = 25° 30A T = 125° 1.5mA ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGT30H170T3G Min IGBT Diode 3500 -40 -40 -40 To heatsink M4 2 www.microsemi.com Typ Max Unit 0 ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGT30H170T3G =15V 125° =125° 2 Energy losses vs Collector Current 900V CE 35 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT30H170T3G Forward Characteristic of diode 100 ...