APTGF150DA120TG Microsemi Power Products Group, APTGF150DA120TG Datasheet

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APTGF150DA120TG

Manufacturer Part Number
APTGF150DA120TG
Description
IGBT NPT BOOST CHOP 1200V SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF150DA120TG

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
VBUS SENSE
G2
E2
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
VBUS
SENSE
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Boost chopper
0/VBU S
Q2
CR1
0/VBUS
Parameter
G2
G2
E2
E2
VBUS
OUT
NTC2
NTC1
NTC2
NTC1
OUT
OUT
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
300A @ 1200V
APTGF150DA120TG
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive T
Low profile
RoHS compliant
1200
200
150
300
±20
961
V
I
C
-
-
-
-
-
-
-
-
-
-
CES
= 150A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 1200V
Unit
W
A
V
V
C
of V
®
CEsat
1 - 5

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APTGF150DA120TG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DA120TG Application • AC and DC motor control • Switched Mode Power Supplies NTC2 • ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF150DA120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF150DA120TG R T: Thermistor temperature 25    Thermistor value at T     ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DA120TG =15V) GE 300 T J 250 200 150 100 T =125° (V) Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DA120TG Forward Characteristic of diode 500 ...

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