APTGF75DDA120TG

Manufacturer Part NumberAPTGF75DDA120TG
DescriptionIGBT MODULE NPT BOOST CHOP SP4
ManufacturerMicrosemi Power Products Group
APTGF75DDA120TG datasheet
 

Specifications of APTGF75DDA120TG

Igbt TypeNPTConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 75A
Current - Collector (ic) (max)100ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce5.1nF @ 25VPower - Max500W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual Boost Chopper
NPT IGBT Power Module
VBUS
G4
SENSE1
E4
VBUS
0/VBUS
VBUS
E2
SENSE2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF75DDA120TG
V
CES
I
C
Application
AC and DC motor control
Switched Mode Power Supplies
Power factor correction
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
OUT2
Very rugged
Direct mounting to heatsink (isolated package)
OUT1
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
Easy paralleling due to positive T
NTC1
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
100
c
T
= 80°C
75
c
T
= 25°C
150
c
±20
T
= 25°C
500
c
T
= 150°C
150A @ 1200V
j
www.microsemi.com
= 1200V
= 75A @ Tc = 80°C
®
of V
C
CEsat
Unit
V
A
V
W
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APTGF75DDA120TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DDA120TG V CES I C Application • AC and DC motor control • Switched Mode Power Supplies • ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF75DDA120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF75DDA120TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DDA120TG =15V) GE 150 T J 125 100 =125° Energy losses vs Collector Current 125° ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DDA120TG Forward Characteristic of diode 250 ...