APTGF75DDA120TG Microsemi Power Products Group, APTGF75DDA120TG Datasheet
APTGF75DDA120TG
Specifications of APTGF75DDA120TG
Related parts for APTGF75DDA120TG
APTGF75DDA120TG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DDA120TG V CES I C Application • AC and DC motor control • Switched Mode Power Supplies • ...
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... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF75DDA120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF75DDA120TG R T: Thermistor temperature 25 Thermistor value at T ...
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... Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DDA120TG =15V) GE 150 T J 125 100 =125° Energy losses vs Collector Current 125° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DDA120TG Forward Characteristic of diode 250 ...